BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet - Page 9

TRANS NPN 15V 9GHZ SOT-416

BFR520T,115

Manufacturer Part Number
BFR520T,115
Description
TRANS NPN 15V 9GHZ SOT-416
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR520T,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Mounting Type
Surface Mount
Power - Max
150mW
Current - Collector (ic) (max)
70mA
Voltage - Collector Emitter Breakdown (max)
15V
Transistor Type
NPN
Frequency - Transition
9GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Noise Figure (db Typ @ F)
1.1dB ~ 1.6dB @ 900MHz
Dc Current Gain Hfe Max
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage(max)
20V
Emitter-base Voltage (max)
2.5V
Collector Current (dc) (max)
70mA
Dc Current Gain (min)
60
Frequency (max)
9GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-75
Collector-base Voltage
20V
Emitter-base Voltage
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Compliant
Other names
934055892115::BFR520T T/R::BFR520T T/R
NXP Semiconductors
2000 Apr 03
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
Z
C
C
o
= 20 mA; V
= 20 mA; V
= 50 .
CE
CE
= 6 V.
= 6 V;
Fig.16 Common emitter reverse transmission coefficient (s
Fig.17 Common emitter output reflection coefficient (s
180°
180°
0.5
0
−135°
−135°
0.4
135°
135°
0.2
0.2
0.2
0.3
0.5
0.5
0.2
0.5
0.1
−90°
−90°
90°
90°
9
1
1
1
3 GHz
40 MHz
3 GHz
2
2
2
5
−45°
40 MHz
22
45°
−45°
45°
); typical values.
12
5
5
); typical values.
MRC061
MRC060
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR520T

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