BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet - Page 5

• Manufacturer Part Number: BFR520T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR520T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 150mW
• Current - Collector (ic) (max): 70mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Noise Figure (db Typ @ F): 1.1dB ~ 1.6dB @ 900MHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-75
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934055892115::BFR520T T/R::BFR520T T/R

NXP Semiconductors
2000 Apr 03
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
G UM
V
G
MSG = maximum stable gain.
G
Fig.6
I
G
MSG = maximum stable gain.
G
Fig.8
(dB)
C
CE
UM
max
UM
max
= 5 mA; V
gain
(dB)
= 6 V; f = 900 MHz; T
= maximum unilateral power gain.
= maximum unilateral power gain.
= maximum available gain.
50
40
30
20
10
= maximum available gain.
20
18
16
14
12
10
10
0
0
−2
Maximum unilateral power gain as a
Gain as a function of frequency;
function of collector current; typical values.
typical values.
CE
= 6 V; T
10
amb
10
MSG
G UM
amb
−1
= 25 C.
= 25 C.
20
I C (mA)
1
G max
f (GHz)
V
CE
30
= 6 V
MRC027
MRC024
3 V
10
5
handbook, halfpage
handbook, halfpage
V
G
MSG = maximum stable gain.
G
Fig.7
I
G
MSG = maximum stable gain.
G
Fig.9
gain
(dB)
C
CE
UM
max
UM
max
gain
= 20 mA; V
(dB)
= 6 V; f = 2 GHz; T
= maximum unilateral power gain.
= maximum unilateral power gain.
25
20
15
10
= maximum available gain.
50
40
30
20
10
= maximum available gain.
5
0
0
10
0
−2
Gain as a function of collector current;
typical values.
Gain as a function of frequency;
typical values.
CE
= 6 V; T
MSG
10
amb
10
amb
G UM
−1
= 25 C.
= 25 C.
20
I C (mA)
1
Product specification
G max
f (GHz)
BFR520T
30
MRC025
MRC026
G max
G UM
MSG
10