BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet - Page 4

• Manufacturer Part Number: BFR520T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR520T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 150mW
• Current - Collector (ic) (max): 70mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Noise Figure (db Typ @ F): 1.1dB ~ 1.6dB @ 900MHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-75
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934055892115::BFR520T T/R::BFR520T T/R

NXP Semiconductors
2000 Apr 03
handbook, halfpage
NPN 9 GHz wideband transistor
C re
(pF)
I
Fig.4
C
(mW)
P tot
= 0; f = 1 MHz.
200
150
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve.
2
50
4
100
6
150
8
V
T s (°C)
CB
MRC021
MGU068
(V)
200
10
4
handbook, halfpage
handbook, halfpage
V
Fig.3
(GHz)
f = 1 GHz; T
Fig.5
CE
f T
h FE
= 6 V; T
200
150
100
12
10
50
10
8
6
4
2
0
0
1
−2
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
amb
j
= 25 C.
= 25 C.
10
−1
10
1
V
CE
Product specification
I C (mA)
10
= 8 V
3 V
BFR520T
I C (mA)
MRC028
MRC022
100
10
2