BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 3

TRANS NPN 10V 250MA SOT223

BLT80,115

Manufacturer Part Number
BLT80,115
Description
TRANS NPN 10V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLT80,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
900MHz
Power - Max
2W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 150mA, 5V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934004160115
BLT80 T/R
BLT80 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLT80,115
Quantity:
1 400
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. T
2. Transistor mounted on a printed-circuit board measuring 40
1996 May 09
V
V
V
I
I
I
P
T
T
R
R
SYMBOL
SYMBOL
C
C(AV)
CM
handbook, halfpage
stg
j
CBO
CEO
EBO
tot
th j-s
th j-a
UHF power transistor
T
s
s
= 131 C.
10
10
(A)
is the temperature at the soldering point of the collector pin.
I C
1
1
2
1
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
peak collector current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
Fig.2 DC SOAR.
PARAMETER
10
PARAMETER
V CE (V)
MRA780 - 1
10
2
open emitter
open base
open collector
f
T
s
= 131 C; note 1
1 MHz
3
CONDITIONS
P
P
40
tot
tot
= 2 W; T
= 2 W; T
1 mm, collector pad 35
CONDITIONS
s
amb
= 131 C; note 1
= 25 C; note 2
65
MIN.
17 mm.
Product specification
20
10
3
250
250
750
2
+150
175
VALUE
MAX.
22
85
BLT80
V
V
V
mA
mA
mA
W
C
C
UNIT
UNIT
K/W
K/W

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