BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 5

TRANS NPN 10V 250MA SOT223

BLT80,115

Manufacturer Part Number
BLT80,115
Description
TRANS NPN 10V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLT80,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
900MHz
Power - Max
2W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 150mA, 5V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934004160115
BLT80 T/R
BLT80 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLT80,115
Quantity:
1 400
Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
Note
1. T
Ruggedness in class-AB operation
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; V
1996 May 09
handbook, halfpage
UHF power transistor
Class-B; f = 900 MHz; V
Fig.5
(dB)
s
G p
is the temperature at the soldering point of the collector pin.
10
CW, class-B narrow band
8
6
4
2
0
MODE OF OPERATION
0
Power gain and collector efficiency as
functions of load power; typical values.
G p
C
0.3
s
CE
= 7.5 V; T
60 C in a common emitter test circuit (see note 1 and Fig.7).
0.6
s
0.9
60 C.
CE
= 9 V; P
1.2
P L (W)
MRA774
(MHz)
L
1.5
900
= 0.8 W; T
100
80
60
40
20
0
f
(%)
C
5
s
handbook, halfpage
60 C.
V
(V)
7.5
Class-B; f = 900 MHz; V
CE
(W)
P L
1.5
1.2
0.9
0.6
0.3
Fig.6
0
0
Load power as a function of drive
power; typical values.
(W)
0.8
P
L
200
CE
= 7.5 V; T
s
typ. 8
(dB)
G
60 C.
400
6
p
Product specification
P D (mW)
MRA779
BLT80
typ. 67
600
(%)
60
C

Related parts for BLT80,115