BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 8

• Manufacturer Part Number: BLT80,115
• Description: TRANS NPN 10V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT80,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 900MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 150mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934004160115; BLT80 T/R; BLT80 T/R

Philips Semiconductors
1996 May 09
handbook, halfpage
handbook, halfpage
UHF power transistor
Class-B; V
Class-B; V
Fig.9
(dB)
G p
( )
Z i
10
10
8
6
4
2
0
8
6
4
2
0
800
800
Fig.11 Power gain as a function of
CE
Input impedance as a function of frequency
(series components); typical values.
CE
= 7.5 V; P
= 7.5 V; P
840
840
frequency; typical values.
L
L
x i
r i
= 0.8 W; T
= 0.8 W; T
880
880
s
s
920
920
60 C.
60 C.
960
960
f (MHz)
f (MHz)
MRA775
MRA777
1000
1000
8
handbook, halfpage
handbook, halfpage
Class-B; V
Fig.10 Load impedance as a function of frequency
(
Z L
30
25
20
15
10
Fig.12 Definition of transistor impedance.
0
5
800
CE
(series components); typical values.
= 7.5 V; P
Z i
840
R L
X L
L
= 0.8 W; T
880
s
Z L
920
60 C.
MBA451
Product specification
960
f (MHz)
MRA778
BLT80
1000