BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 7

• Manufacturer Part Number: BLT80,115
• Description: TRANS NPN 10V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT80,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 900MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 150mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934004160115; BLT80 T/R; BLT80 T/R

Philips Semiconductors
1996 May 09
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
strap
strap
C1
L4
R1
C2
L1
L2
L3
C3
L5
mounting
screws
140
(8x)
7
C4
L6
L7
C5
L8
R2
L9
rivets
(14x)
V CC
L10
C7
C6
strap
strap
MBB648
C8
Product specification
80
BLT80