BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 9
![TRANS NPN 10V 250MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BLT80,115
Manufacturer Part Number
BLT80,115
Description
TRANS NPN 10V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BLT80115.pdf
(12 pages)
Specifications of BLT80,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
900MHz
Power - Max
2W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 150mA, 5V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934004160115
BLT80 T/R
BLT80 T/R
BLT80 T/R
BLT80 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
PACKAGE OUTLINE
1996 May 09
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
max
16
o
1.80
max
0.32
0.24
0.10
0.01
16
max
10
o
o
S
seating plane
Fig.13 SOT223.
1
2.3
9
6.7
6.3
3.1
2.9
4.6
0.80
0.60
2
0.1 S
4
3
A
3.7
3.3
B
0.1
(4x)
0.95
0.85
M
7.3
6.7
B
MSA035 - 1
0.2
M
A
Product specification
BLT80