MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 11
MX0912B251Y,114
Manufacturer Part Number
MX0912B251Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B251Y114.pdf
(12 pages)
Specifications of MX0912B251Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.4dB
Power - Max
690W
Current - Collector (ic) (max)
15A
Mounting Type
Surface Mount
Package / Case
SOT-439A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
934050610114
MX0912B251Y TRAY
MX0912B251Y TRAY
MX0912B251Y TRAY
MX0912B251Y TRAY
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
NOTES
1997 Feb 19
11
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