MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 7

• Manufacturer Part Number: MX0912B251Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.4dB
• Power - Max: 690W
• Current - Collector (ic) (max): 15A
• Mounting Type: Surface Mount
• Package / Case: SOT-439A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 934050610114; MX0912B251Y TRAY; MX0912B251Y TRAY

Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
V CC
0.635
6
2
6
3
2.5
30
8
L1
L2
3
9
Fig.6 Broadband test circuit.
C3
3
3
C5
4.5
22
5
7
5
5
5
22
C6
5
11
3
30
L3
0.635
12
C4
V CC
MGK068
C1
1 2 1
3
MX0912B251Y
40
Product specification