MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 7
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MX0912B251Y,114
Manufacturer Part Number
MX0912B251Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B251Y114.pdf
(12 pages)
Specifications of MX0912B251Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.4dB
Power - Max
690W
Current - Collector (ic) (max)
15A
Mounting Type
Surface Mount
Package / Case
SOT-439A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
934050610114
MX0912B251Y TRAY
MX0912B251Y TRAY
MX0912B251Y TRAY
MX0912B251Y TRAY
Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
V CC
0.635
6
2
6
3
2.5
30
8
L1
L2
3
9
Fig.6 Broadband test circuit.
C3
3
3
C5
4.5
22
5
7
5
5
5
22
C6
5
11
3
30
L3
0.635
12
C4
V CC
MGK068
C1
1 2 1
3
MX0912B251Y
40
Product specification