MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 3

• Manufacturer Part Number: MX0912B251Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.4dB
• Power - Max: 690W
• Current - Collector (ic) (max): 15A
• Mounting Type: Surface Mount
• Package / Case: SOT-439A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 934050610114; MX0912B251Y TRAY; MX0912B251Y TRAY

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 19
handbook, halfpage
V
V
V
V
I
P
T
T
T
SYMBOL
C
stg
j
sld
CBO
CES
CEO
EBO
tot
NPN microwave power transistor
t
Fig.2
p
= 10 s;
1000
P tot
(W)
800
600
400
200
0
50
Maximum power dissipation derating as a
function of mounting base temperature.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
= 10%; P
0
tot max
PARAMETER
= 690 W.
100
T mb ( C)
MGL041
open emitter
R
open base
open collector
t
T
t
p
200
mb
BE
10 s; note 1
10 s;
= 75 C; t
= 0
3
p
10%
CONDITIONS
10 s;
10%
MX0912B251Y
MIN.
65
Product specification
65
60
20
3
15
690
+200
200
235
MAX.
V
V
V
V
A
W
C
C
C
UNIT