MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 9

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MX0912B251Y,114

Manufacturer Part Number
MX0912B251Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MX0912B251Y,114

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.4dB
Power - Max
690W
Current - Collector (ic) (max)
15A
Mounting Type
Surface Mount
Package / Case
SOT-439A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
934050610114
MX0912B251Y TRAY
MX0912B251Y TRAY
Philips Semiconductors
PACKAGE OUTLINE
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
3.3
2.9
3.3
0.15 max
seating plane
8.25
Fig.9 SOT439A.
12.85 max
23 max
16.5
max
3.7
3
9
2
1
1.6 max
9.85
max
MBC881
max
6
10.3
10.0
min
min
2.7
2.7
MX0912B251Y
Product specification

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