MX0912B251Y,114 NXP Semiconductors, MX0912B251Y,114 Datasheet - Page 6

• Manufacturer Part Number: MX0912B251Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.4dB
• Power - Max: 690W
• Current - Collector (ic) (max): 15A
• Mounting Type: Surface Mount
• Package / Case: SOT-439A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 934050610114; MX0912B251Y TRAY; MX0912B251Y TRAY

Philips Semiconductors
List of components
1997 Feb 19
handbook, full pagewidth
COMPONENT
L1, L2
L3
C1
C2
C3
C4
C5, C6
NPN microwave power transistor
0.65 mm diameter copper wire
4 turns 0.65 mm diameter
copper wire
DC block
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
DESCRIPTION
1 s
1 s
300 s
3 ms
Fig.5 Pulse definition.
100 pF
10 F; 50 V
470 F; 63 V
0.8 to 8 pF
VALUE
6
total length = 12 mm;
height of loop = 9 mm
int. diameter 3 mm;
L = 5 mm
DIMENSIONS
MGK066
ATC, ref. 100A101KP50X
Erie, ref. 1250-003
Tekelec, ref. 729.1
MX0912B251Y
CATALOGUE NO.
Product specification