MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 38

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 30:
WRITE with Auto Precharge
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
READ with Auto Precharge Interrupted by a WRITE
Internal
States
Note:
1. Interrupted by a READ (with or without auto precharge): A READ to bank m will inter-
2. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will
COMMAND
rupt a WRITE on bank n when registered, with the data-out appearing CL later. The
precharge to bank n will begin after
bank m is registered. The last valid WRITE to bank n will be data-in registered one
clock prior to the READ to bank m (see Figure 31 on page 39).
interrupt a WRITE on bank n when registered. The precharge to bank n will begin
after
valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank
m (see Figure 32 on page 39).
ADDRESS
BANK m
DQM is HIGH at T2 to prevent D
BANK n
DQM
CLK
DQ
t
WR is met, where
1
Active
Page
READ - AP
BANK n,
BANK n
COL a
T0
READ with Burst of 4
Page Active
T1
NOP
CL = 3 (bank n)
t
WR begins when the WRITE to bank m is registered. The last
T2
38
NOP
OUT
T3
D
a +1 from contending with D
NOP
OUT
a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WR is met, where
BANK m,
WRITE - AP
COL d
BANK m
T4
D
d
256Mb: x16, x32 Mobile SDRAM
IN
Interrupt Burst, Precharge
WRITE with Burst of 4
T5
d + 1
NOP
D
IN
t
RP - BANK n
t
WR begins when the READ to
T6
d + 2
NOP
D
IN
©2006 Micron Technology, Inc. All rights reserved.
IN
DON’T CARE
d at T4.
T7
t WR - BANK m
d + 3
NOP
D
IN
Write-Back
Idle
Operations