MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 77

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. A, Advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/06
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
• Changed the “8” address lines going into the “column address counter/Latch” to “9”
• Changed all references of 13 to 12 and changed the “8” address lines going into the
• Changed the “8” address lines going into the “column address counter/Latch” to “9”
• Deleted “(4 Meg x32 x4 banks)” from the first sentence of the “Functional Descrip-
• Removed the following sentence from the “Mode Register (MR) section: “M12 and
• Added A12 to Figure 6.
• Added notes 2? and 2 to Figure 8.
• Removed Table 5, “CAS Latency.”
• Removed all notes except note 2 and added note 1 to Table 5.
• Removed all text references to the “2n rule.”
• Changed the following items in Table 12: Changed
• Added Table 14 for x32 specifications.
• Changed the following specifications in Table 16: CLK 1.5 (MIN) 4.5 (MAX), Input 2.0
• Added Figure 33.
• Deleted first line of “Solder Ball Material” in Figure 52.
• Changed “Burst Length = 1” in the I
• Added a “Contact factory for availability” note to Figure 6.
• Initial release
in Figure 2.
“column address counter/Latch” to “9” in Figure 3.
in Figure 2.
tion” section.
M13 should be set to zero to prevent the EMR from being programmed.”
8 speed grades, changed
changed
(MIN) 4.5 (MAX), DQs 2.0 (MIN) 6.0 (MAX)
t
HZ(2) from 7/8 to 9ns for -75 and -8 speed grades.
t
CK(2) from 9 tp 10ns for -75 and -8 speed grades, and
77
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 row in Table 13 and Table 14.
256Mb: x16, x32 Mobile SDRAM
t
AC(2) from 7/8 to 9ns for -75 and -
©2006 Micron Technology, Inc. All rights reserved.
Revision History