MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 7

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 3:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
A[11:0],
BA[1:0]
CAS#
RAS#
WE#
CKE
CLK
CS#
14
ADDRESS
REGISTER
8 Meg x 32 SDRAM
MODE REGISTER
EXT MODE
REGISTER
CONTROL
LOGIC
14
COUNTER
REFRESH
12
9
2
13
ADDRESS
2
ROW-
MUX
COUNTER/
CONTROL
COLUMN-
ADDRESS
LATCH
LOGIC
BANK
12
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
9
4096
7
READ DATA LATCH
DQM MASK LOGIC
SENSE AMPLIFIERS
(4096 x 512 x 32)
WRITE DRIVERS
I/O GATING
DECODER
COLUMN
MEMORY
BANK0
ARRAY
4096
(x32)
512
BANK1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK2
BANK3
256Mb: x16, x32 Mobile SDRAM
BA1
0
0
1
1
Functional Block Diagrams
32
32
4
BA0
0
1
0
1
REGISTER
REGISTER
OUTPUT
INPUT
DATA
DATA
©2006 Micron Technology, Inc. All rights reserved.
Bank
0
1
2
3
4
32
DQM[3:0]
DQ[31:0]