MT48LC32M8A2TG-75:D Micron Technology Inc, MT48LC32M8A2TG-75:D Datasheet - Page 23
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT48LC32M8A2TG-75:D
Manufacturer Part Number
MT48LC32M8A2TG-75:D
Description
DRAM Chip SDRAM 256M-Bit 32Mx8 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC32M8A2TG-75D.pdf
(87 pages)
Specifications of MT48LC32M8A2TG-75:D
Density
256 Mb
Maximum Clock Rate
133 MHz
Package
54TSOP-II
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
6|5.4 ns
Operating Temperature
0 to 70 °C
Organization
32Mx8
Address Bus
15b
Access Time (max)
6/5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
Electrical Specifications – I
Table 10: I
Notes 1–5 apply to all parameters and conditions; V
Table 11: I
Notes 1–5 apply to all parameters and conditions; V
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks active af-
ter
Operating current: Burst mode; Continuous burst; READ or WRITE; All banks
active
Auto refresh current: CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; Page burst; READ or WRITE; All banks
active
Auto refresh current: CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
t
RCD met; No accesses in progress
t
RCD met; No accesses in progress
DD
DD
Specifications and Conditions (-6A)
Specifications and Conditions (-7E, -75)
Notes:
1. All voltages referenced to V
2. The minimum specifications are used only to indicate cycle time at which proper opera-
3. An initial pause of 100μs is required after power-up, followed by two AUTO REFRESH
4. AC operating and I
tion over the full temperature range is ensured; (0°C ≤ TA ≤ +70°C (commercial), –40°C ≤
TA ≤ +85°C (industrial), and –40°C ≤ TA ≤ +105°C (automotive)).
commands, before proper device operation is ensured. (V
up simultaneously. V
mand wake-ups should be repeated any time the
reference level of 1.5V. If the input transition time is longer than 1ns, then the timing is
DD
t
t
t
Standard
Low power (L)
RFC =
RFC = 7.813μs
RFC = 1.953μs (AT)
Parameters
DD
DD
DD
/V
t
t
t
/V
RFC =
RFC = 7.813μs
RFC = 1.953μs (AT)
SS
DDQ
DDQ
test conditions have V
t
RFC (MIN)
and V
= +3.3V ±0.3V
= +3.3V ±0.3V
t
t
23
t
RC =
RC =
RFC (MIN)
SS
Electrical Specifications – I
SSQ
.
t
t
must be at same potential.) The two AUTO REFRESH com-
RC (MIN)
RC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
DD6
DD7
DD7
IL
= 0V and V
Symbol
I
I
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
DD6
DD7
256Mb: x4, x8, x16 SDRAM
t
REF refresh requirement is exceeded.
135
135
285
-7E
3.5
2.5
1.5
40
2
8
Max
IH
DD
= 3.0V using a measurement
-6A
135
135
285
and V
3.5
2.5
© 1999 Micron Technology, Inc. All rights reserved.
40
2
8
-75
125
135
270
3.5
2.5
1.5
40
2
8
DDQ
DD
must be powered
Unit
mA
mA
mA
mA
mA
mA
mA
μA
Unit
Parameters
mA
mA
mA
mA
mA
mA
mA
mA
mA
10, 11, 12
6, 9, 10,
6, 8, 10,
6, 9, 10,
6, 9, 10,
6, 8, 10,
6, 9, 10,
6, 8, 9,
Notes
6, 8, 9,
10, 13,
Notes
11
12
11
11
13
13
13
13
14
7
7