MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 16

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

Final Product/Process Change Notification #16266
MMBZ5246BLT1G
MMBZ5246BLT1H
MMBZ5246ELT1G
MMBZ5247BLT1
MMBZ5247BLT1G
MMBZ5247BLT3G
MMBZ5248BLT1
MMBZ5248BLT1G
MMBZ5248BLT3G
MMBZ5248ELT1G
MMBZ5249BLT1
MMBZ5249BLT1G
MMBZ5250BLT1
MMBZ5250BLT1G
MMBZ5250BLT1H
MMBZ5250BLT3G
MMBZ5250ELT1G
MMBZ5251BLT1G
MMBZ5251BLT1H
MMBZ5252BLT1G
MMBZ5252BLT1H
MMBZ5252ELT1G
MMBZ5253BLT1G
MMBZ5253ELT1G
MMBZ5254BLT1
MMBZ5254BLT1G
MMBZ5254BLT1H
MMBZ5255BLT1G
MMBZ5256BLT1G
MMBZ5256BLT1H
MMBZ5256ELT1G
MMBZ5257BLT1
MMBZ5257BLT1G
MMBZ5257BLT1H
MMBZ5257BLT3G
MMBZ5257ELT1G
MMBZ5258BLT1G
MMBZ5258BLT1H
MMBZ5259BLT1G
MMBZ5259BLT1H
MMBZ5260BLT1G
MMBZ5260BLT1H
MMBZ5261BLT1G
MMBZ5261BLT1H
MMBZ5261BLT3G
MMBZ5261ELT1G
MMBZ5263BLT1
MMBZ5263BLT1G
MMBZ5263BLT1H
MMBZ5264BLT1G
MMBZ5268BLT1G
MMBZ5270BLT1G
MMBZ5V6ALT1
MMBZ5V6ALT1G
MMBZ5V6ALT1H
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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