MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 29

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

Final Product/Process Change Notification #16266
SZBZX84C39LT1G
SZBZX84C39LT3G
SZBZX84C3V0ET1G
SZBZX84C3V0LT1
SZBZX84C3V0LT1G
SZBZX84C3V0LT3
SZBZX84C3V3ET1G
SZBZX84C3V3LT1
SZBZX84C3V3LT1G
SZBZX84C3V3LT3G
SZBZX84C3V6ET1G
SZBZX84C3V6LT1
SZBZX84C3V6LT1G
SZBZX84C3V6LT3G
SZBZX84C3V9ET1G
SZBZX84C3V9ET3G
SZBZX84C3V9LT1G
SZBZX84C3V9LT3
SZBZX84C43ET1
SZBZX84C43ET1G
SZBZX84C43LT1
SZBZX84C43LT1G
SZBZX84C47ET1
SZBZX84C47ET1G
SZBZX84C47ET3
SZBZX84C47LT1
SZBZX84C47LT1G
SZBZX84C47LT3
SZBZX84C47LT3G
SZBZX84C4V3ET1G
SZBZX84C4V3LT1
SZBZX84C4V3LT1G
SZBZX84C4V3LT3
SZBZX84C4V7ET1G
SZBZX84C4V7ET3
SZBZX84C4V7LT1
SZBZX84C4V7LT1G
SZBZX84C4V7LT3G
SZBZX84C51ET1G
SZBZX84C51LT1
SZBZX84C51LT1G
SZBZX84C56ET1G
SZBZX84C56LT1
SZBZX84C56LT1G
SZBZX84C5V1ET1G
SZBZX84C5V1ET3G
SZBZX84C5V1LT1
SZBZX84C5V1LT1G
SZBZX84C5V1LT3
SZBZX84C5V1LT3G
SZBZX84C5V6ET1G
SZBZX84C5V6ET3
SZBZX84C5V6ET3G
SZBZX84C5V6LT1
SZBZX84C5V6LT1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 29 of 36