MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 9

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

Final Product/Process Change Notification #16266
AFFECTED DEVICE LIST
BAS16HT1
BAS16HT1G
BAS16HT1H
BAS16HT3G
BAS20HT1G
BAS21AHT1G
BAS21HT1
BAS21HT1G
BAS40-04LT1
BAS40-04LT1G
BAS40-04LT1H
BAS40-06LT1G
BAS40LT1
BAS40LT1G
BAS40LT3G
BAS70-04LT1
BAS70-04LT1G
BAS70LT1
BAS70LT1G
BAT54ALT1
BAT54ALT1G
BAT54ALT1H
BAT54CLT1
BAT54CLT1G
BAT54CLT1H
BAT54CLT3G
BAT54HT1
BAT54HT1G
BAT54HT1H
BAT54LT1
BAT54LT1G
BAT54LT1H
BAT54SLT1
BAT54SLT1G
BAT54SLT1H
BAT54T1
BAT54T1G
BC846BDW1T1G
BC846BDW1T1H
BC846BPDW1T1G
BC847BDW1T1G
BC847BDW1T3
BC847BDW1T3G
BC847BPDW1T1
BC847BPDW1T1G
BC847BPDW1T2G
BC847CDW1T1
BC847CDW1T1G
BC847CDW1T1H
BC848CDW1T1G
BC848CPDW1T1G
BC856BDW1T1G
BC856BDW1T3
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 9 of 36