MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 7

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

Final Product/Process Change Notification #16266
MM3Z43VT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
TSOP-6
MBT35200MT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
SOT-223
BCP69T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=175C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
1008 hrs
1008 hrs
1008 hrs
1000 cyc
96 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
Results
0/252
0/1008
0/252
0/252
0/252
0/252
0/252
0/6
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
0/6
0/90
0/252
0/6
0/90
0/240
0/6
0/90
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