MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 31

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

Final Product/Process Change Notification #16266
SZMM3Z5V1ST1G
SZMM3Z5V1T1G
SZMM3Z5V6ST1G
SZMM3Z5V6T1G
SZMM3Z6V2T1G
SZMM3Z6V8T1
SZMM3Z6V8T1G
SZMM3Z8V2T1G
SZMM3Z9V1T1G
SZMMBZ12VALT1G
SZMMBZ15VALT1
SZMMBZ15VALT1G
SZMMBZ15VALT3G
SZMMBZ15VDLT1
SZMMBZ15VDLT1G
SZMMBZ15VDLT3G
SZMMBZ18VALT1
SZMMBZ18VALT1G
SZMMBZ18VALT3G
SZMMBZ20VALT1
SZMMBZ20VALT1G
SZMMBZ20VALT3G
SZMMBZ27VALT1
SZMMBZ27VALT1G
SZMMBZ27VALT3
SZMMBZ27VALT3G
SZMMBZ27VCLT1
SZMMBZ27VCLT1G
SZMMBZ27VCLT3
SZMMBZ27VCLT3G
SZMMBZ33VALT1
SZMMBZ33VALT1G
SZMMBZ33VALT3G
SZMMBZ4252T1
SZMMBZ4252T1G
SZMMBZ5221BLT1G
SZMMBZ5222BLT1
SZMMBZ5222BLT1G
SZMMBZ5225BLT1G
SZMMBZ5226BLT1
SZMMBZ5226BLT1G
SZMMBZ5227BLT1G
SZMMBZ5228BLT1
SZMMBZ5228BLT1G
SZMMBZ5229BLT1
SZMMBZ5229BLT1G
SZMMBZ5230BLT1G
SZMMBZ5231BLT1
SZMMBZ5231BLT1G
SZMMBZ5231BLT3G
SZMMBZ5232BLT1G
SZMMBZ5232BLT3G
SZMMBZ5233BLT1G
SZMMBZ5234BLT1
SZMMBZ5234BLT1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 31 of 36