MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 6

TRANS BRT PNP DUAL 50V SOT-363

MUN5111DW1T1G

Manufacturer Part Number
MUN5111DW1T1G
Description
TRANS BRT PNP DUAL 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN5111DW1T1G

Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
10kohm
Base-emitter Resistor R2
10kohm
Resistor Ratio, R1 / R2
1
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN5111DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
27 490
Part Number:
MUN5111DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5111DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
MBR130T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MBR0540T3G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
SOD-323
BAT54HT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
Issue Date: 08 Jun 2009
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
1008 hrs
Interval:
Interval:
1008 hrs
15000 cyc
1008 hrs
15000 cyc
15000 cyc
1008 hrs
1008 hrs
1000 cyc
1008 hrs
1000 cyc
1000 cyc
1008 hrs
1008 hrs
96 hrs
1008 hrs
96 hrs
96 hrs
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
0/2
0/30
0/2
0/30
0/6
0/90
Page 6 of 36

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