PBSS8510PA,115 NXP Semiconductors, PBSS8510PA,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS8510PA,115
• Description: TRANSISTOR PNP 100V 5.2A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS8510PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 5.2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 150MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 95 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 260mA, 5.2A
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 150 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5.2 A
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063924115

NXP Semiconductors
9. Package outline
10. Packing information
PBSS8510PA
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
PBSS8510PA
Fig 16. Package outline SOT1061 (HUSON3)
For further information and the availability of packing methods, see
Packing methods
SOT1061
All information provided in this document is subject to legal disclaimers.
1.05
0.95
Dimensions in mm
Rev. 1 — 17 May 2010
Description
4 mm pitch, 8 mm tape and reel
0.3
0.2
0.35
0.25
1
1.3
1.6
1.4
2.1
1.9
3
100 V, 5.2 A NPN low V
2
1.1
0.9
0.45
0.35
2.1
1.9
Section
PBSS8510PA
[1]
09-11-12
0.65
max
14.
CEsat
Packing quantity
3000
-115
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
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