PBSS8510PA,115 NXP Semiconductors, PBSS8510PA,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS8510PA,115
• Description: TRANSISTOR PNP 100V 5.2A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS8510PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 5.2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 150MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 95 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 260mA, 5.2A
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 150 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5.2 A
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063924115

NXP Semiconductors
PBSS8510PA
Product data sheet
Fig 6.
Fig 8.
h
V
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
600
400
200
1.2
0.8
0.4
0.0
0
10
10
V
DC current gain as a function of collector
current; typical values
V
current; typical values
Base-emitter voltage as a function of collector
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
All information provided in this document is subject to legal disclaimers.
3
3
006aac128
006aac130
I
I
C
C
(mA)
(mA)
10
10
4
4
Rev. 1 — 17 May 2010
Fig 7.
Fig 9.
V
(V)
(A)
BEsat
I
(1) T
(2) T
(3) T
C
1.2
0.8
0.4
0.0
6
4
2
0
10
100 V, 5.2 A NPN low V
0.0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
−1
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1.0
1
I
B
2.0
10
(mA) = 110
(1)
(2)
(3)
PBSS8510PA
88
66
44
22
10
3.0
2
CEsat
99
77
55
33
11
© NXP B.V. 2010. All rights reserved.
10
4.0
(BISS) transistor
3
006aac129
006aac131
V
I
C
CE
(mA)
(V)
10
5.0
4
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