PBSS8510PA,115 NXP Semiconductors, PBSS8510PA,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS8510PA,115
• Description: TRANSISTOR PNP 100V 5.2A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS8510PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 5.2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 150MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 95 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 260mA, 5.2A
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 150 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5.2 A
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063924115

NXP Semiconductors
6. Thermal characteristics
PBSS8510PA
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
[3]
[4]
Symbol
T
T
T
Symbol
R
Fig 1.
j
amb
stg
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, mounting pad for collector 1 cm
(4) FR4 PCB, standard footprint
Power derating curves
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
Parameter
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
P
(W)
tot
2
2.5
2.0
1.5
1.0
0.5
0.0
O
Rev. 1 — 17 May 2010
−75
3
, standard footprint
…continued
(1)
(2)
(3)
(4)
−25
2
2
O
O
3
3
, standard footprint.
, standard footprint.
Conditions
Conditions
in free air
25
100 V, 5.2 A NPN low V
2
2
75
125
T
[1]
[2]
[3]
[4]
006aab978
amb
Min
-
-
-
-
(°C)
PBSS8510PA
175
Min
-
−55
−65
CEsat
Typ
-
-
-
-
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
150
+150
+150
Max
250
125
90
60
Unit
°C
°C
°C
2
2
2
2
.
.
.
.
Unit
K/W
K/W
K/W
K/W
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