PBSS8510PA,115 NXP Semiconductors, PBSS8510PA,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS8510PA,115
• Description: TRANSISTOR PNP 100V 5.2A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS8510PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 5.2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 150MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 95 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 260mA, 5.2A
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 150 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5.2 A
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063924115

NXP Semiconductors
7. Characteristics
PBSS8510PA
Product data sheet
Table 7.
T
[1]
Symbol
I
I
I
h
V
R
V
V
t
t
t
t
t
f
C
t
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 May 2010
Conditions
V
V
T
V
V
V
I
I
I
I
I
I
I
I
V
V
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
Bon
Boff
C
j
CB
CB
CE
EB
CE
CE
CC
CE
CB
I
I
I
I
= 150 °C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 5.2 A; I
= 5.2 A; I
= 1 A; I
= 5.2 A; I
= 100 mA;
C
C
C
C
= 0.1 A;
= −0.1 A
= 5 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 2 V
= 2 V; I
= 10 V;
= 10 V; I
= 9 V; I
= 0.5 A
= 1 A
= 2 A
= 6 A
100 V, 5.2 A NPN low V
B
B
B
B
C
= 50 mA
= 10 mA
= 400 mA
= 10 mA
B
B
B
B
C
C
E
E
E
= 0 A
= 50 mA
= 260 mA
= 260 mA
= 260 mA
= 2 A
= 2 A;
BE
= i
= 0 A
= 0 A;
= 0 V
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
PBSS8510PA
Min
-
-
-
-
180
150
95
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
95
-
CEsat
Typ
-
-
-
-
285
235
145
45
30
55
120
170
250
48
0.79
1
0.77
24
246
270
735
230
965
150
16.5
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
100
50
100
100
-
-
-
-
40
75
160
220
340
65
0.9
1.1
0.9
-
-
-
-
-
-
-
20
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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