PBSS8510PA,115 NXP Semiconductors, PBSS8510PA,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS8510PA,115
• Description: TRANSISTOR PNP 100V 5.2A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS8510PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 5.2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 150MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 95 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 260mA, 5.2A
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 150 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5.2 A
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063924115

NXP Semiconductors
8. Test information
PBSS8510PA
Product data sheet
Fig 14. BISS transistor switching time definition
Fig 15. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 9 V; I
All information provided in this document is subject to legal disclaimers.
oscilloscope
t
d
C
= 2 A; I
t
on
V
t
I
Rev. 1 — 17 May 2010
r
Bon
(probe)
450 Ω
= 0.1 A; I
R1
R2
Boff
R
= −0.1 A
B
V
100 V, 5.2 A NPN low V
BB
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
Boff
(100 %)
s
PBSS8510PA
t
off
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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