MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 9

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 2:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Pin Assignment (Top View) 48-Pin TSOP Type 1
Notes:
RE# (W/R#)
WE# (CLK)
1. CE2# and R/B2# on are not available and are treated as NC.
2. For asynchronous devices with VccQ = 3.3V, these signals can be treated as DNU.
3. For synchronous devices with VccQ = 1.8V, these signals must be supplied with a 1.8V volt-
4. Signal names in parentheses are the signal names when the synchronous interface is active.
R/B2#
age supply.
CE2#
WP#
R/B#
CE#
ALE
CLE
Vcc
Vss
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
1
4
1
4
Micron Confidential and Proprietary
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
8Gb Asychronous/Synchronous NAND Flash Memory
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2008 Micron Technology, Inc. All rights reserved.
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
DNU/VssQ
NC
NC
NC
I/O7 (DQ7)
I/O6 (DQ6)
I/O5 (DQ5)
I/O4 (DQ4)
NC
DNU/VccQ
DNU
Vcc
Vss
NC (DQS)
DNU/VccQ
NC
I/O3 (DQ3)
I/O2 (DQ2)
I/O1 (DQ1)
I/O0 (DQ0)
NC
NC
DNU
DNU/VssQ
Advance
4
2
2, 3
2, 3
4
4
4
4
4
4
4
4