MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 92
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MT29F8G08ABABAWP:B
Manufacturer Part Number
MT29F8G08ABABAWP:B
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F8G08ABABAWPB.pdf
(142 pages)
Specifications of MT29F8G08ABABAWP:B
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Synchronous Input Slew Rate
Table 22:
Table 23:
Synchronous Output Slew Rate
Table 24:
Table 25:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Test Conditions for Input Slew Rate
Input Slew Rate (VccQ = 1.7–1.95V)
Test Conditions for Output Slew Rate
Output Slew Rate (VccQ = 1.7–1.95V)
Though all AC timing parameters are tested with a nominal input slew rate of 1V/ns, it is
possible to run the device at a slower slew rate. The input slew rates shown below are
sampled, and not 100 percent tested. If using slew rates slower than the minimum
values, timing must be derated by the host.
The output slew rate is tested using the following setup with only one die per I/O
channel.
Parameter
Rising Edge
Falling Edge
Temperature Range
Description
Input slew rate (Min)
Derating factor for setup times
Derating factor for hold times
Parameter
Rising Edge
Falling Edge
Output Capacitive Load (C
Temperature Range
Output Drive Strength
Overdrive 2
Overdrive 1
Nominal
Underdrive
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
LOAD
)
92
TBD
TBD
0.5
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TBD
TBD
0.5
1
Timing Mode
Synchronous Input Slew Rate
Min
0.85
0.75
0.6
1
TBD
TBD
0.5
2
V
V
V
V
IL
IH
IL
IH
TBD
TBD
0.5
(DC) to V
3
(DC) to V
(DC) to V
(DC) to V
©2008 Micron Technology, Inc. All rights reserved.
Value
Value
Max
5pF
5.5
T
T
5
4
4
A
A
TBD
TBD
0.5
4
IH
IH
IL
IL
(AC)
(AC)
(AC)
(AC)
ps per 100mV
ps per 100mV
Unit
V/ns
Unit
V/ns
V/ns
V/ns
V/ns
Advance