PSD834F2-15M STMicroelectronics, PSD834F2-15M Datasheet - Page 17
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PSD834F2-15M
Manufacturer Part Number
PSD834F2-15M
Description
Manufacturer
STMicroelectronics
Datasheet
1.PSD834F2-15M.pdf
(95 pages)
Specifications of PSD834F2-15M
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Operating Temperature Classification
Commercial
Package Type
PQFP
Mounting
Surface Mount
Pin Count
52
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
INSTRUCTIONS
An instruction consists of a sequence of specific
operations. Each received byte is sequentially de-
coded by the PSD and not executed as a standard
WRITE operation. The instruction is executed
when the correct number of bytes are properly re-
ceived and the time between two consecutive
bytes is shorter than the time-out period. Some in-
structions are structured to include READ opera-
tions after the initial WRITE operations.
The instruction must be followed exactly. Any in-
valid combination of instruction bytes or time-out
between two consecutive bytes while addressing
Flash memory resets the device logic into READ
Mode (Flash memory is read like a ROM device).
The PSD supports the instructions summarized in
Table 7:
Flash memory:
■
■
■
■
■
■
■
These instructions are detailed in Table 7. For ef-
ficient decoding of the instructions, the first two
bytes of an instruction are the coded cycles and
are followed by an instruction byte or confirmation
byte. The coded cycles consist of writing the data
AAh to address X555h during the first cycle and
data 55h to address XAAAh during the second cy-
cle. Address signals A15-A12 are Don’t Care dur-
ing the instruction WRITE cycles. However, the
appropriate
CSBOOT0-CSBOOT3) must be selected.
The primary and secondary Flash memories have
the same instruction set (except for Read Primary
Flash Identifier). The Sector Select signals deter-
mine which Flash memory is to receive and exe-
cute the instruction. The primary Flash memory is
selected if any one of Sector Select (FS0-FS7) is
High, and the secondary Flash memory is selected
if any
CSBOOT3) is High.
Power-down Instruction and Power-up Mode
Power-up Mode. The PSD internal logic is reset
upon Power-up to the READ Mode. Sector Select
(FS0-FS7 and CSBOOT0-CSBOOT3) must be
Erase memory by chip or sector
Suspend or resume sector erase
Program a Byte
Reset to READ Mode
Read primary Flash Identifier value
Read Sector Protection Status
Bypass
one of Sector Select (CSBOOT0-
Sector
Select
(FS0-FS7
or
held Low, and Write Strobe (WR, CNTL0) High,
during Power-up for maximum security of the data
contents and to remove the possibility of a byte be-
ing written on the first edge of Write Strobe (WR,
CNTL0). Any WRITE cycle initiation is locked
when V
READ
Under typical conditions, the MCU may read the
primary Flash memory or the secondary Flash
memory using READ operations just as it would a
ROM or RAM device. Alternately, the MCU may
use READ operations to obtain status information
about a Program or Erase cycle that is currently in
progress. Lastly, the MCU may use instructions to
read special data from these memory blocks. The
following sections describe these READ functions.
Read Memory Contents. Primary Flash memory
and secondary Flash memory are placed in the
READ Mode after Power-up, chip reset, or a Reset
Flash instruction (see Table 7). The MCU can read
the memory contents of the primary Flash memory
or the secondary Flash memory by using READ
operations any time the READ operation is not
part of an instruction.
Read Primary Flash Identifier. The
Flash memory identifier is read with an instruction
composed of 4 operations: 3 specific WRITE oper-
ations and a READ operation (see Table 7). Dur-
ing the READ operation, address Bits A6, A1, and
A0 must be '0,' '0,' and '1,' respectively, and the ap-
propriate Sector Select (FS0-FS7) must be High.
The identifier for the device is E7h.
Read Memory Sector Protection Status. The
primary Flash memory Sector Protection Status is
read with an instruction composed of 4 operations:
3 specific WRITE operations and a READ opera-
tion (see Table 7). During the READ operation, ad-
dress Bits A6, A1, and A0 must be '0,' '1,' and '0,'
respectively, while Sector Select (FS0-FS7 or
CSBOOT0-CSBOOT3) designates the Flash
memory sector whose protection has to be veri-
fied. The READ operation produces 01h if the
Flash memory sector is protected, or 00h if the
sector is not protected.
The sector protection status for all NVM blocks
(primary Flash memory or secondary Flash mem-
ory) can also be read by the MCU accessing the
Flash Protection registers in PSD I/O space. See
the section entitled “Flash Memory Sector Pro-
tect”, on page 22, for register definitions.
CC
is below V
LKO
.
PSD834F2V
primary
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