5962-9098501MRA E2V, 5962-9098501MRA Datasheet - Page 21

• Manufacturer Part Number: 5962-9098501MRA
• Manufacturer: E2V

Specifications of 5962-9098501MRA

• Lead Free Status / RoHS Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
requiring an RHA level greater than 5K rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in
table I herein and shall be the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at
initial qualification and after any design or process changes which may affect the RHA response of the device.
performed in accordance with method 1020 of MIL-STD-883 and as specified herein. Tests shall be performed on devices,
SEC, or approved test structures at technology qualification and after any design or process changes which may affect the RHA
capability of the process.
with method 1021 of MIL-STD-883 and herein.
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The test conditions for SEP are as follows:
Currents given are conventional current and positive when flowing into the referenced terminal.
B, S, Q, and V or MIL-PRF-38535, appendix A for device class M.
(original equipment), design applications, and logistics purposes.
contractor-prepared specification or drawing.
4.4.5.1.1 Accelerated annealing test. Accelerated annealing shall be performed on classes M, B, S, Q, and V devices
4.4.5.2 Dose rate induced latch-up testing. When required by the customer, dose rate induced latch-up testing shall be
4.4.5.3 Dose rate upset testing. When required by the customer, dose rate upset testing shall be performed in accordance
4.4.5.4 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a
a.
b.
c.
d.
e.
f.
g.
a. Transient dose rate upset testing for class M devices shall be performed at initial qualification and after any design or
b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
DEFENSE SUPPLY CENTER COLUMBUS
process changes which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless
otherwise specified.
radiation hardness assurance plan and MIL-PRF-38535. Device parametric parameters that influence upset immunity
shall be monitored at the wafer level in accordance with the wafer level hardness assurance plan and MIL-PRF-38535.
The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive
(i.e. 0  angle  60). No shadowing of the ion beam due to fixturing or package related effects is allowed.
The fluence shall be  100 errors or ≥ 10
The flux shall be between 10
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
The particle range shall be  20 microns in silicon.
The upset test temperature shall be +25C. The latchup test temperature shall be at the maximum rated operating
temperature 10C.
Bias conditions shall be defined by the manufacturer for latchup measurements.
For SEP test limits, see table IB herein.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
2
and 10
5
ions/cm
7
ions/cm
2
/s. The cross-section shall be verified to be flux independent by
2
.
SIZE
A
REVISION LEVEL
C
SHEET
5962-90985
21