BSM75GB120DLC Infineon Technologies, BSM75GB120DLC Datasheet

BSM75GB120DLC

Manufacturer Part Number

BSM75GB120DLC

Description

IGBT Modules 1200V 75A DUAL

Manufacturer

Infineon Technologies

Datasheet

1.BSM75GB120DLC.pdf (9 pages)

Specifications of BSM75GB120DLC

Configuration

Dual

Channel Type

Collector-emitter Voltage

1.2kV

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

2.4 V

Continuous Collector Current At 25 C

170 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

690 W

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

34MM

Ic (max)

75.0 A

Vce(sat) (typ)

2.1 V

Technology

IGBT2 Low Loss

Housing

34 mm

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSM75GB120DLC

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

BSM75GB120DLC

Quantity:

Current page: 1 of 9
Download datasheet (143Kb)

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

Grenzlastintegral der Diode

Isolations-Prüfspannung

insulation test voltage

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

Gate-Schwellenspannung

gate threshold voltage

Gateladung

gate charge

Eingangskapazität

input capacitance

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current

prepared by: MOD-D2; Mark Münzer

approved by: SM TM; Wilhelm Rusche

IGBT-Module

IGBT-Modules

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Transistor / Transistor

Technische Information / Technical Information

t - value, Diode

RMS, f = 50 Hz, t = 1 min.

f = 1MHz,T

date of publication: 2003-01-10

revision: 3.0

BSM75GB120DLC

= 1 ms, T

= 1 ms

= 25° C

=25°C, Transistor

= 75A, V

= 3mA, V

= 80 °C

= 25 °C

= 0V, t

= 1200V, V

= 0V, V

= -15V...+15V

= 10ms, T

= 25°C,V

= 80°C

= 15V, T

= V

= 20V, T

= 0V, T

, T

= 125°C

= 25°C

= 125°C

= 25°C

= 25V, V

= 25°C

1(8)

= 25°C

= 0V

C,nom.

CRM

CE sat

GE(th)

FRM

CES

GES

ISOL

CES

GES

res

tot

ies

min.

4,5

+/- 20V

1200

typ.

1,19

0,33

170

150

690

150

2,5

2,1

2,4

5,5

0,8

5,1

max.

400

2,6

2,9

6,5

DB_BSM75GB120DLC_3.0

k A

µC

2003-01-10

Related parts for BSM75GB120DLC

BSM75GB120DLC Summary of contents

Page 1

... V 1200 V CES C,nom. I 170 150 A CRM P 690 W tot V +/- 20V V GES 150 A FRM 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE(th 0,8 - µ 5 ies res CES 400 nA GES DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 2

... 2(8) min. typ. max 0,05 - µs d,on - 0,06 - µ 0,05 - µ 0,05 - µ 0,30 - µs d,off - 0,35 - µ 0,05 - µ 0,07 - µ 7 off I - 540 - 1 CC‘+EE‘ min. typ. max 1,8 2 1,7 2 105 - µ 16,5 - µ rec - 6 DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 3

... BSM75GB120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = grease Schraube / screw M6 Anschlüsse / terminals M5 3(8) min. typ. max 0,18 K/W thJC - - 0,50 K 0,05 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg 275 M 3 2 250 g DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 4

... Output characteristic (typical) 150 125 VGE = 17V VGE = 15V VGE = 13V 100 VGE = 11V VGE = 9V VGE = 0,0 0,5 1,0 BSM75GB120DLC 15V GE 1,5 2,0 2,5 V [V] CE 1,5 2,0 2,5 3,0 3,5 V [ 3,0 3,5 4 125°C vj 4,0 4,5 5,0 DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 5

... Transfer characteristic (typical) 150 125 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 150 125 100 0,0 0,5 BSM75GB120DLC Tvj = 25°C Tvj = 125° [V] GE Tvj = 25°C Tvj = 125°C 1,0 1,5 2,0 V [ 20V 2,5 3,0 DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 6

... Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 24 Eoff 20 Eon Erec Schaltverluste (typisch) Switching losses (typical) 30 Eoff 25 Eon Erec BSM75GB120DLC off C V =±15V 600V 125° 100 I [ off V =±15V , I = 75A , V = 600V , 6( rec C 125 150 ) , rec G = 125° DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 7

... Reverse bias safe operation area (RBSOA) 175 150 125 IC,Modul 100 IC,Chip 200 BSM75GB120DLC Z thJC 0 20,13 60,93 0,002 0,03 65,43 173,31 0,002 0, ±15V 400 600 800 1000 V [ (t) Zth:Diode Zth:IGBT 79,4 19,54 0,066 1,655 189,08 72,18 0,072 0,682 = 125° 1200 1400 DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC 8(8) DB_BSM75GB120DLC_3.0 2003-01-10 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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