BSM75GB120DLC Infineon Technologies, BSM75GB120DLC Datasheet - Page 4

• Manufacturer Part Number: BSM75GB120DLC
• Description: IGBT Modules 1200V 75A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM75GB120DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 690 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
150
125
100
150
125
100
75
50
25
75
50
25
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
Tvj = 25°C
Tvj = 125°C
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
1,0
BSM75GB120DLC
1,5
1,5
2,0
V
V
CE
CE
2,0
2,5
4(8)
[V]
[V]
3,0
2,5
V
I
C
GE
= f (V
= 15V
3,5
I
C
T
vj
= f (V
CE
= 125°C
3,0
)
4,0
CE
)
3,5
4,5
4,0
5,0
DB_BSM75GB120DLC_3.0
2003-01-10