BSM75GB120DLC Infineon Technologies, BSM75GB120DLC Datasheet - Page 5

• Manufacturer Part Number: BSM75GB120DLC
• Description: IGBT Modules 1200V 75A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM75GB120DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 690 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
150
125
100
150
125
100
75
50
25
75
50
25
0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
0,5
BSM75GB120DLC
Tvj = 25°C
Tvj = 125°C
7
Tvj = 25°C
Tvj = 125°C
1,0
8
V
V
GE
F
1,5
[V]
5(8)
[V]
9
I
2,0
C
V
CE
= f (V
= 20V
10
GE
)
2,5
11
I
F
= f (V
F
)
3,0
12
DB_BSM75GB120DLC_3.0
2003-01-10