BSM75GB120DLC Infineon Technologies, BSM75GB120DLC Datasheet - Page 7

• Manufacturer Part Number: BSM75GB120DLC
• Description: IGBT Modules 1200V 75A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM75GB120DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 690 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
175
150
125
100
75
50
25
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
[K/kW]
i
i
i
[s]
[s]
IC,Modul
IC,Chip
200
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM75GB120DLC
400
20,13
0,002
65,43
0,002
1
600
0,1
7(8)
V
173,31
60,93
CE
0,03
0,03
800
2
[V]
t [s]
Z
thJC
V
GE
= ±15V, R
1000
= f (t)
Zth:Diode
Zth:IGBT
189,08
0,066
0,072
79,4
1
3
G
= 10
1200
, T
vj
19,54
1,655
72,18
0,682
= 125°C
4
1400
10
DB_BSM75GB120DLC_3.0
2003-01-10