BSM75GB120DLC Infineon Technologies, BSM75GB120DLC Datasheet - Page 6

• Manufacturer Part Number: BSM75GB120DLC
• Description: IGBT Modules 1200V 75A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM75GB120DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 690 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
30
25
20
15
10
24
20
16
12
5
0
8
4
0
Schaltverluste (typisch)
Switching losses (typical)
0
0
Schaltverluste (typisch)
Switching losses (typical)
25
10
Eoff
Eon
Erec
Eoff
Eon
Erec
BSM75GB120DLC
50
20
V
E
GE
on
=±15V, R
= f (I
V
E
GE
R
G
I
C
on
=10
C
=±15V , I
G
) , E
75
30
[A]
[ ]
= f (R
6(8)
, V
off
CE
C
= 75A , V
= f (I
G
= 600V, T
) , E
C
100
off
) , E
CE
40
vj
= 600V , T
= 125°C
= f (R
rec
= f (I
G
vj
) , E
= 125°C
C
125
)
50
rec
= f (R
G
)
150
60
DB_BSM75GB120DLC_3.0
2003-01-10