FP50R12KS4C Infineon Technologies, FP50R12KS4C Datasheet - Page 11

• Manufacturer Part Number: FP50R12KS4C
• Description: IGBT Transistors 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KS4C

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Package / Case: EconoPIM3-24
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
Schaltplan/ Circuit diagram
Gehäuseabmessungen/ Package outlines
Technische Information / Technical Information
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FP50R12KS4C
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NTC
DB-PIM-S_IGBT_V2.xls
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2001-11-28