FP50R12KS4C Infineon Technologies, FP50R12KS4C Datasheet - Page 5

• Manufacturer Part Number: FP50R12KS4C
• Description: IGBT Transistors 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KS4C

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Package / Case: EconoPIM3-24
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
1
1
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8V
FP50R12KS4C
Tj = 25°C
Tj = 125°C
2
2
V
V
CE
CE
5/11
[V]
[V]
3
3
I
C
V
I
T
C
GE
vj
= f (V
= f (V
= 125°C
= 15 V
4
4
CE
CE
)
)
5
5
DB-PIM-S_IGBT_V2.xls
6
6
2001-11-28