FP50R12KS4C Infineon Technologies, FP50R12KS4C Datasheet - Page 4
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FP50R12KS4C
Manufacturer Part Number
FP50R12KS4C
Description
IGBT Transistors 1200V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.FP50R12KS4C.pdf
(12 pages)
Specifications of FP50R12KS4C
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
230 W
Maximum Operating Temperature
+ 125 C
Package / Case
EconoPIM3-24
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Packages
AG-ECONO3-1
Ic (max)
50.0 A
Vce(sat) (typ)
3.2 V
Technology
IGBT2 Fast
Housing
EconoPIM 3
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FP50R12KS4C
Manufacturer:
EUPEC
Quantity:
334
Part Number:
FP50R12KS4C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP50R12KS4C
Quantity:
119
IGBT-Module
IGBT-Modules
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Technische Information / Technical Information
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
FP50R12KS4C
4/11
Paste
grease
=1W/m*K
=1W/m*K
T
R
R
T
T
vj max
M
thCK
vj op
G
thJC
stg
min.
-40
-40
-
-
-
-
-
-
-
-
-
±10%
Al
typ.
0,04
0,02
0,04
225
300
2
3
-
-
-
-
-
-
-
-
O
3
DB-PIM-S_IGBT_V2.xls
max.
0,65
0,35
0,55
0,55
150
125
125
1,2
-
-
-
2001-11-28
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Nm
°C
°C
°C
g