FP50R12KS4C Infineon Technologies, FP50R12KS4C Datasheet - Page 7

• Manufacturer Part Number: FP50R12KS4C
• Description: IGBT Transistors 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KS4C

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Package / Case: EconoPIM3-24
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
10
9
8
7
6
5
4
3
2
1
0
18
16
14
12
10
8
6
4
2
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
5
20
Eon
Eoff
Erec
10
Eon
Eoff
Erec
FP50R12KS4C
40
R
I
C
15
G
E
T
[A]
[ ]
7/11
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
= f (R
60
C
), E
G
20
), E
GE
off
V
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
C
80
), E
G
25
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
= f (R
C
,
)
= R
100
V
V
CC
CC
G
Goff
30
)
=
=
=
DB-PIM-S_IGBT_V2.xls
600 V
15Ohm
600 V
120
35
2001-11-28