FP50R12KS4C Infineon Technologies, FP50R12KS4C Datasheet - Page 9

• Manufacturer Part Number: FP50R12KS4C
• Description: IGBT Transistors 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KS4C

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Package / Case: EconoPIM3-24
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
1
Tj = 25°C
Tj = 125°C
FP50R12KS4C
1
Tj = 25°C
Tj = 125°C
1,5
V
V
CE
F
[V]
9/11
[V]
1,5
2
2,5
2
I
F
= f (V
I
C
V
3
= f (V
GE
F
)
= 15 V
CE
2,5
)
3,5
DB-PIM-S_IGBT_V2.xls
4
3
2001-11-28