FF800R12KE3 Infineon Technologies, FF800R12KE3 Datasheet - Page 2

• Manufacturer Part Number: FF800R12KE3
• Description: IGBT Modules 1200V 800A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF800R12KE3

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.9 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
Kurzschlussverhalten
SC data
Modulindiktivität
stray inductance module
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
Durchlassspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recoverred charge
Ausschaltenergie pro Puls
reverse recovery energy
IGBT-Module
IGBT-Modules
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Technische Information / technical information
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
V
T
I
I
I
V
V
I
V
V
I
V
V
C
C
C
C
C
C
P
F
F
F
F
F
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
CC
c
= I
= I
=I
R
R
=I
R
R
=I
R
R
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 800A, V
£ 10µs, V
= 25°C
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
=±15V, R
C,nom
C,nom
C,nom
= 900V, V
C, nom
C, nom
, -di
, -di
, -di
, V
, V
FF800R12KE3
Gon
Gon
Gon
Gon
Goff
Goff
Goff
Goff
Gon
Goff
F
F
F
CC
CC
CC
CC
CC
CC
GE
GE
GE
/dt= 3600A/µs
GE
GE
/dt= 3600A/µs
GE
GE
/dt= 3600A/µs
GE
GE
2 (8)
CEmax
= 600V
= 600V
= 600V
= 600V
= 600V, L
= 600V, L
= 0V, T
= 0V, T
=3,3W, T
=3,3W, T
=3,3W, T
=3,3W, T
=3,3W, T
=0,39W, T
=0,39W,T
=0,39W, T
=0,39W,T
=0,39W, T
£ 15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= V
vj
vj
vj
vj
vj
vj
vj
CES
= 25°C
= 125°C
vj
vj
=25°C
= 125°C
=25°C
= 125°C
= 125°C
vj
vj
vj
Vj
s
s
= 125°C
= 125°C
=25°C
=25°C
= 125°C
vj
vj
vj
vj
vj
vj
= 90nH
= 90nH
£ 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
- L
sCE
· çdi/dtç
R
L
CC´/EE´
t
t
E
E
E
I
d,off
I
V
d,on
Q
sCE
SC
RM
t
t
rec
off
r
f
on
F
r
vorläufige Daten
preliminary data
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB_FF800R12KE3_2.0.xls
3200
0,60
0,66
0,23
0,22
0,82
0,96
0,15
0,18
0,18
typ.
160
125
260
400
2,2
20
37
90
24
2
9
max.
2,8
2002-07-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mW
mJ
mJ
nH
µC
µC
mJ
mJ
µs
µs
µs
µs
µs
µs
µs
µs
A
V
V
A
A