FF800R12KE3 Infineon Technologies, FF800R12KE3 Datasheet - Page 6

• Manufacturer Part Number: FF800R12KE3
• Description: IGBT Modules 1200V 800A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF800R12KE3

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.9 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
500
450
400
350
300
250
200
150
100
500
450
400
350
300
250
200
150
100
50
50
0
0
0
0
2
200
4
400
Eon
Eoff
Erec
Eon
Eoff
Erec
6
8
FF800R12KE3
600
6 (8)
10
V
V
E
E
GE
GE
on
on
=±15V, R
=±15V, I
R
I
= f (I
= f (R
C
800
G
12
[A]
[W]
C
gon
=800A, V
C
G
) , E
=3,3W, R
14
) , E
1000
off
CE
off
=600V, T
16
goff
= f (I
=0,39W, V
= f (R
1200
18
C
vj
) , E
=125°C
vorläufige Daten
preliminary data
G
CE
) , E
=600V, T
20
DB_FF800R12KE3_2.0.xls
rec
1400
rec
= f (I
vj
22
= f (R
=125°C
C
1600
)
2002-07-30
24
G
)