FF800R12KE3 Infineon Technologies, FF800R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FF800R12KE3
• Description: IGBT Modules 1200V 800A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF800R12KE3

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.9 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
0,001
0,01
1800
1600
1400
1200
1000
0,1
800
600
400
200
r
0,001
r
i
i
0
[K/kW] : Diode
t
[K/kW] : IGBT
t
i
i
0
[s] : Diode
[s] : IGBT
i
200
IC,Chip
0,01
6,897E-01
4,452E-01
13,45
18,37
400
1
FF800R12KE3
7 (8)
IC,Chip
600
5,634E-02
7,451E-02
16,12
20,16
V
t [s]
0,1
CE
2
[V]
800
Z
V
2,997E-02
2,647E-02
GE
thJC
=±15V, T
21,17
1,83
3
= f (t)
Zth : IGBT
Zth : Diode
1000
1
vj
vorläufige Daten
preliminary data
=125°C
3,820E-03
2,850E-03
1200
DB_FF800R12KE3_2.0.xls
0,60
4,30
4
1400
10
2002-07-30