FF800R12KE3 Infineon Technologies, FF800R12KE3 Datasheet - Page 5

• Manufacturer Part Number: FF800R12KE3
• Description: IGBT Modules 1200V 800A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF800R12KE3

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.9 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
Technische Information / technical information
1600
1400
1200
1000
1600
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0
5
6
Tvj = 25°C
Tvj = 125°C
Tvj=25°C
Tvj=125°C
7
FF800R12KE3
5 (8)
8
V
V
GE
F
9
[V]
[V]
10
I
V
I
C
F
CE
= f(V
= f(V
= 20V
11
vorläufige Daten
preliminary data
F
GE
)
)
DB_FF800R12KE3_2.0.xls
12
2002-07-30
13