CY7C1315KV18-250BZXC Cypress Semiconductor Corp, CY7C1315KV18-250BZXC Datasheet - Page 17

• Manufacturer Part Number: CY7C1315KV18-250BZXC
• Description: CY7C1315KV18-250BZXC
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1315KV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-58904 Rev. *C
V
V
V
V
V
V
I
15. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
16. Overshoot: V
17. All voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input and output load current
DDQ
Selection
Circuitry
+ 0.85 V (Pulse width less than t
[15, 16, 17]
Description
106
31
Boundary Scan Register
CYC
30
Identification Register
.
Instruction Register
/2), Undershoot: V
29
.
TAP Controller
.
.
.
.
IL
(AC) >
I
I
I
I
–
–
GND  V
OH
OH
OL
OL
Bypass Register
2
2
2
= 2.0 mA
= 100 A
=2.0 mA
=100 A

Test Conditions
1.5 V (Pulse width less than t
1
1
1
CY7C1313KV18, CY7C1315KV18
CY7C1311KV18, CY7C1911KV18
I
 V
0
0
0
0
DD
Electrical Characteristics
Selection
Circuitry
0.65 V
CYC
–0.3
Min
1.4
1.6
/2).
–5
–
–
DD
V
0.35 V
DD
Max
Table.
0.4
0.2
–
–
5
+ 0.3
DD
Page 17 of 33
TDO
Unit
A
V
V
V
V
V
V
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