CY7C1315KV18-250BZXC Cypress Semiconductor Corp, CY7C1315KV18-250BZXC Datasheet - Page 28

• Manufacturer Part Number: CY7C1315KV18-250BZXC
• Description: CY7C1315KV18-250BZXC
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1315KV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 001-58904 Rev. *C
36. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
37. Outputs are disabled (High Z) one clock cycle after a NOP.
38. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note
applies to the whole diagram.
WPS
RPS
CQ
CQ
D
K
A
Q
K
C
C
NOP
t KHCH
1
t KH
t CQH
t KL
t
t SA
SC
A0
READ
2
t HC
t HA
t KHCH
t
t CQHCQH
CYC
t CYC
Figure 5. Read/Write/Deselect Sequence
A1
WRITE
3
t KHKH
t CLZ
t
KHKH
t
SD
t CQOH
D10
A2
Q00
READ
4
t CQOH
t HD
D11
Q01
t CCQO
t CO
t
t
DOH
SC
D12
t SD
A3
CY7C1313KV18, CY7C1315KV18
Q02
CY7C1311KV18, CY7C1911KV18
WRITE
5
t CCQO
t HC
DON’T CARE
[36, 37, 38]
D13
Q03
t CQDOH
D30
t HD
NOP
Q20
6
t
KH
D31
Q21
t CQD
t KL
D32
UNDEFINED
7
Q22
t CHZ
D33
Page 28 of 33
Q23
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