K4H281638B-TCB0000 Samsung Semiconductor, K4H281638B-TCB0000 Datasheet - Page 10

• Manufacturer Part Number: K4H281638B-TCB0000
• Manufacturer: Samsung Semiconductor

Specifications of K4H281638B-TCB0000

• Lead Free Status / Rohs Status: Supplier Unconfirmed

128Mb DDR SDRAM
General Information
Memory
DRAM
Small Classification
Density and Refresh
Organization
Bank
Organization
1. SAMSUNG Memory : K
2. DRAM : 4
3. Small Classification
4. Density & Refresh
5. Organization
6. Bank
7. Interface (VDD & VDDQ)
32Mx4
16Mx8
8Mx16
3 : 4 Bank
16 : x16
32 : x32
04 : x4
08 : x8
8: SSTL-2(2.5V, 2.5V)
64 :
28 : 128M 4K/64ms
56 : 256M 8K/64ms
51 : 512M 8K/64ms
1G :
H : DDR SDRAM
64M 4K/64ms
1G 16K/32ms
K 4 H XX XX X X X - X X
1
2
3
K4H280438B-TCA2
K4H280838B-TCA2
K4H281638B-TCA2
K4H280438B-TLA2
K4H280838B-TLA2
K4H281638B-TLA2
133Mhz w/ CL=2
4
5
6
7
- 10 -
8
8. Version
9. Package
10. Temperature & Power
11. Speed
K4H280438B-TCB0
K4H280838B-TCB0
K4H281638B-TCB0
K4H280438B-TLB0
K4H280838B-TLB0
K4H281638B-TLB0
133Mhz w/ CL=2.5
C : (Commercial, Normal)
L : (Commercial, Low)
A0 : 10ns@CL2
A2 : 7.5ns@CL2
B0 : 7.5ns@CL2.5
T : TSOP2 (400mil x 875mil)
M : 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
E : 6th Generation
9
10
XX
11
REV. 1.31 Nov. 3. 2001
Interface (VDD & VDDQ)
Temperature & Power
K4H280438B-TCA0
K4H280838B-TCA0
K4H281638B-TCA0
K4H280438B-TLA0
K4H280838B-TLA0
K4H281638B-TLA0
100Mhz w/ CL=2
Package
Version
Speed