K4H281638B-TCB0000 Samsung Semiconductor, K4H281638B-TCB0000 Datasheet - Page 47

• Manufacturer Part Number: K4H281638B-TCB0000
• Manufacturer: Samsung Semiconductor

Specifications of K4H281638B-TCB0000

• Lead Free Status / Rohs Status: Supplier Unconfirmed

128Mb DDR SDRAM
8.2.2 Overshoot/Undershoot specification for Data Pins
Parameter
Maximum peak amplitude allowed for overshoot (See Figure 2):
Maximum peak amplitude allowed for undershoot (See Figure 2):
The area between the overshoot signal and VDD must be less than or
equal to (See Figure 2):
The area between the undershoot signal and GND must be less than or
equal to (See Figure 2):
Table 15. Overshoot/Undershoot specification for Data Pins
Notes:
1. This specification is intended for only DDR200, DDR266A and DDR266B devices.
2. This specification is intended for only devices with NO clamp protection
3. This compliance is to be verified by design only.
Figure 25. AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0
Area = 2.5V-ns
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
- 47 -
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Specification
1.2 V
1.2 V
2.5 V-ns
2.5 V-ns
REV. 1.31 Nov. 3. 2001
Notes
1,2,3
1,2,3
1,2,3
1,2,3